Graphene on SiC wafers for high performant RF transistors (GRAPHIC-RF)

This CRP focuses on transport properties of Graphene and its possible application in integrated electronics. In particular, the possibility to grow high quality a few layers of graphene on SiC will be investigated considering different politypes (4H, 3C), the C and Si face, and different crystal orientations on large diameter wafers (up to 150 mm). The transport properties will be measured and compared with graphene flakes obtained by others methods such as exfoliation and chemical synthesis with the final aim to investigate on the role of defects and interfaces in the transport properties. Both structural (HRTEM, LEEM, ARPA), optical (Raman) and electrical measurements (on test patters) will be used and compared. The activity will take advantage by the development and implementation of novel nanocharacterisation methods based on scanning probe microscopy able to determine locally (in the mesoscopic limit) transport properties. A multiscale approach to simulate the transport properties will be developed considering either atomistic models as well as semi-empirical continuum models. The possibility to fabricated devices for high speed (frequency) electronics will be investigated, too, considering switching, rectifiers and passive components all based on graphene.