Epitaxial Graphene Transistor (EPIGRAT)

The aim of EPIGRAT is to synthesize and characterize epitaxial graphene layers on silicon carbide suitable for future electronics using different growth techniques, and to develop and characterize high frequency transistors made from these materials. The graphene layers should have an area of several cm2 and a thickness of one or a few layers fabricated in a controllable way for both polarities of SiC and for various misorientation angles with respect to the c-axis of SiC. Optimization of graphene growth requires proper pressure and temperature range as well as polytype, polarity and surface preparation of SiC substrates. Interactions of graphene with substrates will be investigated and the growth of graphene on SiC of different polarities will be compared.

The project will focus on improving electronic mobility of carriers in graphene – to the level which is obtained in exfoliated graphene. In the device part of EPIGRAT we will: (a) Develop basic fabrication processes and characterization methods for graphene based transistors, (b) Investigate basic electron characteristics using micro-devices, (c) Model graphene transistors, (d) Demonstrate microwave monolithic integrated circuits based on graphene transistors and (e) Develop passive components and via-holes (if required) and circuit design.